| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 2SJ548 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| 2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
From old datasheet system
|
NEC[NEC]
|
| 2SJ574 |
Silicon P Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK3290 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ588 |
Silicon P Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ574 |
Silicon P Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SK3287 |
Silicon N Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SK3289 |
Silicon N Channel MOS FET High Speed Switching
|
Hitachi Semiconductor
|
| 2SK3288 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| RJL6018DPK-00-T0 RJL6018DPK |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
